Details of Research Outputs

TitleInterfacial Perpendicular Magnetic Anisotropy in Sub-20 nm Tunnel Junctions for Large-Capacity Spin-Transfer Torque Magnetic Random-Access Memory
Author (Name in English or Pinyin)
Peng, Shouzhong1; Kang, Wang1; Wang, Mengxing1; Cao, Kaihua1; Zhao, Xiaoxuan1; Wang, Lezhi1; Zhang, Yue1; Zhang, Youguang1; Zhou, Yan3; Wang, Kang L.2; Zhao, Weisheng1
Date Issued2017-04-12
Source PublicationIEEE Magnetics Letters
ISSN1949-307X
DOI10.1109/LMAG.2017.2693961
Funding Project国家自然科学基金项目
Firstlevel Discipline物理学
Education discipline科技类
Published range国外学术期刊
Volume Issue Pages卷: 8
References
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Citation statistics
Cited Times:33[WOS]   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
Identifierhttps://irepository.cuhk.edu.cn/handle/3EPUXD0A/221
CollectionSchool of Science and Engineering
Corresponding AuthorZhao, Weisheng
Affiliation
1.Beihang Univ, Fert Beijing Inst, Sch Elect & Informat Engn, BDBC, Beijing 100191, Peoples R China
2.Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
3.Chinese Univ Hong Kong , Sch Sci & Engn, Shenzhen, Peoples R China
Recommended Citation
GB/T 7714
Peng, Shouzhong,Kang, Wang,Wang, Mengxinget al. Interfacial Perpendicular Magnetic Anisotropy in Sub-20 nm Tunnel Junctions for Large-Capacity Spin-Transfer Torque Magnetic Random-Access Memory[J]. IEEE Magnetics Letters,2017.
APA Peng, Shouzhong., Kang, Wang., Wang, Mengxing., Cao, Kaihua., Zhao, Xiaoxuan., .. & Zhao, Weisheng. (2017). Interfacial Perpendicular Magnetic Anisotropy in Sub-20 nm Tunnel Junctions for Large-Capacity Spin-Transfer Torque Magnetic Random-Access Memory. IEEE Magnetics Letters.
MLA Peng, Shouzhong,et al."Interfacial Perpendicular Magnetic Anisotropy in Sub-20 nm Tunnel Junctions for Large-Capacity Spin-Transfer Torque Magnetic Random-Access Memory".IEEE Magnetics Letters (2017).
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