Details of Research Outputs

TitleMagnetic skyrmion-based artificial neuron device
Author (Name in English or Pinyin)
Li, Sai1,2; Kang, Wang1,2; Huang, Yangqi1,2; Zhang, Xichao3; Zhou, Yan3; Zhao, Weisheng1,2
Date Issued2017-08-04
Source PublicationNANOTECHNOLOGY
ISSN0957-4484
DOI10.1088/1361-6528/aa7af5
Indexed BySCIE
Funding Project国家自然科学基金项目
Firstlevel Discipline物理学
Education discipline科技类
Published range国外学术期刊
Volume Issue Pages卷: 28 期: 31
References
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[11] Wu X, Saxena V, Zhu K and Balagopal S 2015 A CMOS spiking neuron for brain-inspired neural networks with resistive synapses and in situ learning IEEE Trans. Circ. Syst. II: Express Briefs 62 1088-92
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[13] Stoliar P, Tranchant J, Corraze B, Janod E, Besland M P, Tesler F, Rozenberg M and Cario L 2017 A leaky-integrate-and-fire neuron analog realized with a Mott insulator Adv. Funct. Mater. 27 1604740
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[15] Fan D, Yong S, Raghunathan A and Roy K 2014 STT-SNN: a spin-transfer-torque based soft-limiting nonlinear neuron for low-power artificial neural networks IEEE Trans. Nanotechnol. 14 1013-23
[16] Kang W, Huang Y, Zhang X, Zhou Y and Zhao W 2016 Skyrmion-electronics: an overview and outlook Proc. IEEE 104 2040-61
[17] Wiesendanger R 2016 Nanoscale magnetic skyrmions in metallic films and multilayers: a new twist for spintronics Nat. Rev. Mater. 1 16044
[18] Nagaosa N and Tokura Y 2013 Topological properties and dynamics of magnetic skyrmions Nat. Nanotechnol. 8 899-911
[19] Huang Y, Kang W, Zhang X, Zhou Y and Zhao W 2017 Magnetic skyrmion-based synaptic devices Nanotechnology 28 08LT02
[20] Brette R and Gerstner W 2005 Adaptive exponential integrate-and-fire model as an effective description of neuronal activity J. Neurophysiol. 94 3637-42
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Citation statistics
Cited Times:157[WOS]   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
Identifierhttps://irepository.cuhk.edu.cn/handle/3EPUXD0A/98
CollectionSchool of Science and Engineering
Corresponding AuthorZhao, Weisheng
Affiliation
1.Beihang Univ, Fert Beijing Inst, BDBC, Beijing, Peoples R China
2.Beihang Univ, Sch Elect & Informat Engn, Beijing, Peoples R China
3.Chinese Univ Hong Kong , Sch Sci & Engn, Shenzhen, Peoples R China
Recommended Citation
GB/T 7714
Li, Sai,Kang, Wang,Huang, Yangqiet al. Magnetic skyrmion-based artificial neuron device[J]. NANOTECHNOLOGY,2017.
APA Li, Sai, Kang, Wang, Huang, Yangqi, Zhang, Xichao, Zhou, Yan, & Zhao, Weisheng. (2017). Magnetic skyrmion-based artificial neuron device. NANOTECHNOLOGY.
MLA Li, Sai,et al."Magnetic skyrmion-based artificial neuron device".NANOTECHNOLOGY (2017).
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